Porous SiC for Semiconductor Power Device
We have developed a SiO2-reduction process, by which Si can be prepared from SiO2 material. By applying this technology to SiO2 material which has a nano-structure, we have successfully prepared SiC which has also a nano structure.
Because the specific surface area of a nano-structure SiC is much higher than a round SiC, its sublimation rate is high, and high production yield of SiC ingot for the use of semiconductor power devices is expected. SiC powder with nano-structure may also show a unique performance in the field of polishing materials and sintered materials.
Microscopic image of Porous SiC
Microscopic image of Porous SiC